2024
P115. Zijing Zhao, Junzhe Kang, Ashwin Tunga, Hojoon Ryu, Ankit Shukla, Shaloo Rakheja, and Wenjuan Zhu, “Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing”, ACS Nano, 18 (4), 2763 (2024)
P114. Hanwool Lee, Hojoon Ryu, Junzhe Kang and Wenjuan Zhu, "Stable High Temperature Operation of p-GaN Gate HEMT With Etch-stop Layer," IEEE Electron Device Letters, doi: 10.1109/LED.2024.3352046, (2024)
P113. Zijing Zhao, Shaloo Rakheja, Wenjuan Zhu, “Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating”, Appl. Phys. Lett., 124 (7) 073506, (2024)
2023
P112. Wenjuan Zhu and Xia Hong, “Getting two-dimensional materials ready for industrial manufacturing”, Nature Electronics, 6, 931–932, (2023)
P111. Hojoon Ryu, Junzhe Kang, Minseong Park, Byungjoon Bae, Zijing Zhao, Shaloo Rakheja, Kyusang Lee, and Wenjuan Zhu, “Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO”, ACS Applied Materials & Interfaces, 15, 46, 53671, (2023)
P110. Stasiu T. Chyczewski, Ji Shi, Hanwool Lee, Paolo F. Furlanetto, Kai Xu, Arend M. van der Zande and Wenjuan Zhu, “Probing antiferromagnetism in exfoliated Fe3GeTe2 using magneto-transport measurements”, Nanoscale, 15, 14061, (2023)
P109. Hanwool Lee, Hojoon Ryu, Wenjuan Zhu, "Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer dielectrics and silicon nitride passivation", Appl. Phys. Lett. 122, 112103 (2023)
P108. Junzhe Kang, Kai Xu, Hanwool Lee, Souvik Bhattacharya, Zijing Zhao, Zhiyu Wang, R. Mohan Sankaran, and Wenjuan Zhu , "High Ion/Ioff ratio 4H-SiC MISFETs with stable operation at 500 °C using SiO2/SiNx/Al2O3 gate stacks", Appl. Phys. Lett. 122, 082906 (2023)
P107. Hanwool Lee, Hojoon Ryu, Juezhe Kang and Wenjuan Zhu, "High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates", IEEE Journal of the Electron Devices Society, Vol. 11, p. 167, (2023)
P106. Junzhe Kang, Shaloo Rakheja, and Wenjuan Zhu, “Reconfigurable transistors based on van der Waals heterostructures”, MRS Advances (2023)
P105. Ashwin Tunga, Zijing Zhao, Ankit Shukla, Wenjuan Zhu and Shaloo Rakheja, "Physics-Based Modeling and Validation of 2-D Schottky Barrier Field-Effect Transistors," in IEEE Transactions on Electron Devices, Vol. 70, no. 4, p. 2034, (2023)
P104. Zhongjie Ren, Hsien-Chih Huang, Hanwool Lee, Clarence Chan, Henry C. Roberts, Xihang Wu, Aadil Waseem, A F M Anhar Uddin Bhuiyan, Hongping Zhao, Wenjuan Zhu, Xiuling Li, “Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch”, Appl. Phys. Lett., 123 (4), 043505, (2023)
2022
P103. Kai Xu, Zheng Hao, Hussain Alsalman, Junzhe Kang, Changqiang Chen, Zhiyu Wang, Zijing Zhao, Tony Low, and Wenjuan Zhu , "Spatially composition-graded monolayer tungsten selenium telluride", Appl. Phys. Lett. 120, 231903 (2022)
P102. Ahmad E. Islam, Nicholas P. Sepelak, Kyle J. Liddy, Rachel Kahler, Daniel M. Dryden, Jeremiah Williams, Hanwool Lee, Katie Gann, Andreas Popp, Kevin D. Leedy, Nolan S. Hendricks, Jeff. L. Brown, Eric R. Heller, Weisong Wang, Wenjuan Zhu, Michael O. Thompson, Kelson D. Chabak, and Andrew J. Green , "500 °C operation of β-Ga2O3 field-effect transistors", Appl. Phys. Lett. 121, 243501 (2022)
P101. Zijing Zhao, Kai Xu, Jialun Liu, Wei Jiang, Hojoon Ryu, Shaloo Rakheja, Tony Low, Wenjuan Zhu, “Nanoscale Devices Based on Two-dimensional and Ferroelectric Materials”, 80th Device Research Conference (DRC), p. 1-2 (2022)
P100. J. Kang, S. Rakheja and W. Zhu, “Reconfigurable Transistors Based on van der Waals Heterostructures”, SRC TECHCON, (2022).
P99. S. Chyczewski and W. Zhu, “Anomalous Hall Effect in 2D Fe3GeTe2/Platinum Heterostructures”, IEEE Semiconductor Interface Specialists Conference, (2022).
2021
P98. Zijing Zhao, Shaloo Rakheja, Wenjuan Zhu, “Nonvolatile Reconfigurable 2D Schottky Barrier Transistors”, Nano letters, Vol. 21, No. 21, p. 9318, (2021) [PDF]
P97. S. Das, A. Sebastian, E. Pop, C. J. McClellan, A. D. Franklin, T. Grasser, T. Knobloch, Y. Illarionov, A. V Penumatcha, J. Appenzeller, Z. Chen, W. Zhu,, I. Asselberghs, L.-J. Li, U. E. Avci, N. Bhat, T. D. Anthopoulos, and R. Singh, “Transistors based on two-dimensional materials for future integrated circuits”, Nature Electronics, Vol. 4, p. 786, (2021) {PDF}
P96. Zheng Hao, Kai Xu, Junzhe Kang, Changqiang Chen, Wenjuan Zhu, “Atomically thin telluride multiheterostructures: toward spatial modulation of bandgaps”, Nanoscale, Vol. 13, p. 19587, (2021) {PDF}
P95. J. Liu, H. Ryu and W. Zhu, "Nonconventional Analog Comparators Based on Graphene and Ferroelectric Hafnium Zirconium Oxide," in IEEE Transactions on Electron Devices, Vol. 68, 1334, (2021). [PDF]
P94. Duyu Chen, Yu Zheng, Chia-Hao Lee, Sangmin Kang, Wenjuan Zhu, Houlong Zhuang, Pinshane Y Huang, Yang Jiao, “Nearly hyperuniform, nonhyperuniform, and antihyperuniform density fluctuations in two-dimensional transition metal dichalcogenides with defects”, Phys. Rev. B, Vol. 103, Article number: 224102, (2021). [PDF]
2020
P93. Kai Xu; Wei Jiang; Xueshi Gao; Zijing Zhao; Tony Low; Wenjuan Zhu, “Optical control of ferroelectric switching and multifunctional devices based on van der Waals ferroelectric semiconductors”, Nanoscale, 12, 23488-23496, (2020). [PDF]
P92. Zijing Zhao, Kai Xu, Hojoon Ryu, Wenjuan Zhu, “Strong Temperature Effect on the Ferroelectric Properties of CuInP2S6 and Its Heterostructures”, ACS Appl. Mater. Interfaces. 12, 46, 51820 (2020). [PDF]
P91. Kai Xu, Ankit Sharma, Junzhe Kang, Xiaoqiao Hu, Zheng Hao, and Wenjuan Zhu, “Heterogeneous Electronic and Photonic Devices Based on Monolayer Ternary Telluride Core/Shell Structures”, Adv. Mater. 2002548, (2020) [PDF]
P90. Salvador Barraza-Lopez, Fengnian Xia, Wenjuan Zhu, and Han Wang, “Beyond Graphene: Low-Symmetry and Anisotropic 2D Materials”, J. Appl. Phys. 128, 140401 (2020) [PDF]
P89. Jaron A. Kropp, Ankit Sharma, Wenjuan Zhu, Can Ataca, and Theodosia Gougousi, “Surface Defect Engineering of MoS2 for Atomic Layer Deposition of TiO2 Films”, ACS Appl. Mater. Interfaces, (2020) [PDF]
P88. Hojoon Ryu, Kai Xu, Dawei Li, Xia Hong, and Wenjuan Zhu, “Empowering 2D nanoelectronics via ferroelectricity”, Appl. Phys. Lett. (Invited Topical Review), 117, 080503, (2020) [PDF]
P87. Kai Xu, Eric Wynne, and Wenjuan Zhu “Resonant Tunneling and Negative Differential Resistance in Black Phosphorus Vertical Heterostructures”, Advanced Electronic Materials, 2000318, (2020) [PDF]
P86. Chia-Hao Lee, Abid Khan, Di Luo, Tatiane P. Santos, Chuqiao Shi, Blanka E. Janicek, Sangmin Kang, Wenjuan Zhu, Nahil A. Sobh, André Schleife, Bryan K. Clark, and Pinshane Y. Huang,“Deep Learning Enabled Strain Mapping of Single-Atom Defects in Two-Dimensional Transition Metal Dichalcogenides with Sub-Picometer Precision”, Nano Letters, 20, 5, (2020) [PDF]
P85. Jialun Liu, Yujie Zhou, and Wenjuan Zhu, “Determining bandgap of black phosphorus using capacitance”, Applied Physics Letters, 116, 183103, (2020) [PDF]
P84. Kai Xu, Zijing Zhao, Xiaolin Wu, and Wenjuan Zhu, “Van der Waals metallic alloy contacts for multifunctional devices”, 2D Materials, Vol. 7, No. 2, 025035, (2020) [PDF]
2019
P83. Hojoon Ryu, Haonan Wu, Fubo Rao, and Wenjuan Zhu, “Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing”, Scientific Reports, Vol. 9, Article number: 20383, (2019) [PDF]
P82. Kai Xu, Zijing Zhao, Xiaolin Wu, and Wenjuan Zhu, “Transforming Electronic and Photonic Devices Using van der Waals Metallic Alloy Contacts, 50th IEEE Semiconductor Interface Specialists Conference, (2019).
P81. Wenjuan Zhu, Tony Low, Han Wang, Peide Ye, and Xiangfeng Duan, “Nanoscale electronic devices based on transition metal dichalcogenides”, 2D Materials, (Invited Topical Review), Vol. 6, No. 3, (2019) [PDF]
P80. Hojoon Ryu, Kai Xu, Jinhong Kim, Sangmin Kang, Ji Guo, and Wenjuan Zhu, “Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide”, IEEE Transactions on Electron Devices, Vol. 66, p. 2359, (2019) [PDF]
P79. Hojoon Ryu, Haonan Wu, Fubo Rao, and Wenjuan Zhu, “Ferroelectric Tunneling Junctions for Neurosynaptic Computing”, 77th Device Research Conference, (2019).
2018
P78. Jaron A. Kropp, Yuhang Cai, Zihan Yao, Wenjuan Zhu, and Theodosia Gougousi, "Atomic layer deposition of Al2O3 and TiO2 on MoS2 surfaces", Journal of Vacuum Science & Technology A, Vol 36, 06A101, (2018) [PDF]
P77. Kai Xu, Yuhang Cai, and Wenjuan Zhu, "Esaki Diodes Based on 2-D/3-D Heterojunctions", IEEE Transactions on Electron Devices, Vol. 65, No. 10, p. 4155, (2018) [PDF]
P76. Jialun Liu, Yujie Zhou, and Wenjuan Zhu, “Dielectric-induced interface states in black phosphorus and tungsten diselenide capacitors”, Applied Physics Letters, 113, 013103, (2018) [PDF]
P75. Yuhang Cai , Kai Xu and Wenjuan Zhu, "Synthesis of transition metal dichalcogenides and their heterostructures", Materials Research Express, Vol. 5, 095904, (2018) [PDF]
P74. Hojoon Ryu, Kai Xu, Ji Guo, and Wenjuan Zhu, "Ferroelectric Aluminum-Doped Hafnium Oxide for Memory Applications", 76th Device Research Conference, (2018) [PDF]
P73. B. Gopireddy, D. Skarlatos, W. Zhu, and J. Torrellas, "Hetero-Device Architecture for CPUs and GPUs", The 45th International Symposium on Computer Architecture (ISCA), (2018) [PDF]
P72. Zihan Yao, Jialun Liu, Kai Xu, Edmond K. C. Chow, and Wenjuan Zhu, "Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide", Scientific Reports, Vol. 8, Article number: 5221, (2018) [PDF]
P71. A. Sharma, K. Xu, S. Kang, S. Xia, R. Haasch, and W. Zhu*, “Synthesis and Characterization of Monolayer WSe2/WSe2xTe2-2x”, 49th IEEE Semiconductor Interface Specialists Conference, (2018).
P70. S. Kang, S. Xia, Z. Zhao, A. Sharma, and W. Zhu*, “Cooling-mediated One-step Synthesis of Monolayer WSe2/WSe2xTe2-2x Lateral Heterostructures for Photodetector Applications”, 49th IEEE Semiconductor Interface Specialists Conference, (2018).
P69. H. Ryu, K. Xu, D. Kim, F. Rao, and W. Zhu*, “Ferroelectric Zr-doped Hafnium Oxide for Memory Applications”, 49th IEEE Semiconductor Interface Specialists Conference, (2018).
P68. K. Xu, X. Gao, Z. Zhao, and W. Zhu*, “Ferroelectric Modulation of Optoelectronic Properties in WSe2/In2Se3 Heterostructures”, 49th IEEE Semiconductor Interface Specialists Conference, (2018).
P67. Z. Yao, H. Ryu, K. Xu, J. Liu, Y. Cai, Y. Yan, and W. Zhu*, “Nanoscale Devices Based on Two-dimensional Materials and Ferroelectric Materials” (invited paper), IEEE 14th International Conference on Solid-State and Integrated Circuit Technology, (2018).
2017
P66. J. Liu, Y. Zhou, and W. Zhu, “AC characterization of Black Phosphorus with Al2O3 Gate dielectrics”, 48th IEEE Semiconductor Interface Specialists Conference, (2017)
P65. K. Xu, Y. Chen, J. Lyding, and W. Zhu, “Gate-Tunable Resonant Tunneling in Black-Phosphorus/hBN Heterostructures”, 48th IEEE Semiconductor Interface Specialists Conference, (2017)
P64. Z. Yao, J. Liu, K. Xu, E. Chow, and W. Zhu, “Synthesis and Electrical Characterization of Monolayer Tungsten Diselenide”, 48th IEEE Semiconductor Interface Specialists Conference, (2017) [PDF]
P63. W. C Yap, H Jiang, J Liu, Q Xia, W. J. Zhu, “Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide”, Applied Physics Letters, Vol. 111, Article number: 013103, (2017). [PDF]
P62. W. Luo, R. Yang, J. Liu, Y. Zhao, W. Zhu, G. Xia, “Thermal sublimation: a scalable and controllable thinning method for the fabrication of few-layer black phosphorus”, Nanotechnology, Vol. 28, Article number: 285301, (2017) [PDF]
2016
P61. W. C. Yap and W. J. Zhu, "Novel Two-dimensional GeSe-MoS2 PN Heterojunctions", 47th IEEE Semiconductor Interface Specialists Conference, (2016)
P60. J. Liu, and W. J. Zhu, "Characterization of Interface States in Black Phosphorus Capacitors with Boron Nitride Gate Dielectrics", 47th IEEE Semiconductor Interface Specialists Conference, (2016)
P59. Z. Yang, R. Grassi, M. Freitag, Y-H. Lee, T. Low, and W. J. Zhu, “Spatial/temporal photocurrent and electronic transport in monolayer molybdenum disulfide grown by chemical vapor deposition”, Applied Physics Letters Vol. 108, Article number: 083104, (2016) [PDF]
P58. S-C. Lu, M. Mohamed, and W. J. Zhu, “Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals”, 2D Materials, Vol.3, Article number: 011010, (2016) [PDF]
P57. M. Mehboudi, A. M. Dorio, W. J. Zhu, A. van der Zande, H. O. Churchill, A. A. Pacheco-Sanjuan, E. O. Harriss, P. Kumar, and S. Barraza-Lopez, “Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers”, Nano Letters, Vol. 16, pp 1704−1712, (2016) [PDF]
P56. M. Mehboudi, B. M. Fregoso, Y. Yang, W. J. Zhu, A. van der Zande, J. Ferrer, L. Bellaiche, P. Kumar, and S. Barraza-Lopez, "Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides", Phys. Rev. Lett. Vol. 117, Article number: 246802, (2016) [PDF]
P55. Z. Yang, R. Grassi, M. Freitag, Y-H. Lee, T. Low, and W. Zhu, "Spatial/temporal photocurrent and electronic transport in monolayer molybdenum disulfide grown by chemical vapor deposition", Applied Physics Letters Vol. 108, Article number: 083104, (2016) [PDF]
P54. S-C. Lu, M. Mohamed, and W. Zhu, "Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals", 2D Materials, Vol.3, Article number: 011010, (2016) [PDF]
P53. M. Mehboudi, A. M. Dorio, W. Zhu, A. van der Zande, H. O. Churchill, A. A. Pacheco-Sanjuan, E. O. Harriss, P. Kumar, and S. Barraza-Lopez, "Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers", Nano Letters, Vol. 16, pp 1704-1712, (2016) [PDF]
P52. W. C. Yap and W. J. Zhu, "Novel Two-dimensional GeSe-MoS2 PN Heterojunctions", 47th IEEE Semiconductor Interface Specialists Conference, 2016
P51. J. Liu, and W. J. Zhu, "Characterization of Interface States in Black Phosphorus Capacitors with Boron Nitride Gate Dielectrics", 47th IEEE Semiconductor Interface Specialists Conference, 2016
2014
P50. Wenjuan Zhu, Tony Low, Yi-Hsien Lee, Han Wang, Damon B. Farmer, Jing Kong, Fengnian Xia and Phaedon Avouris, "Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition", Nature Communications, Vol. 5, Article number: 3087, (2014) [PDF]
P49. Marcus Freitag, Tony Low, Luis Martin-Moreno, Wenjuan Zhu, Francisco Guinea and Phaedon Avouris, "Substrate-Sensitive Mid-infrared Photoresponse in Graphene", ACS Nano, Vol. 8, pp 8350-8356, (2014) [PDF]
P48. Yilei Li, Hugen Yan, Damon B Farmer, Xiang Meng, Wenjuan Zhu, Richard M Osgood, Tony F Heinz, Phaedon Avouris, "Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers", Nano Letters, Vol.14, pp 1573-1577, (2014) [PDF]
2013
P47. Hugen Yan, Tony Low, Wenjuan Zhu, Yanqing Wu, Marcus Freitag, Xuesong Li, Francisco Guinea, Phaedon Avouris and Fengnian Xia, "Damping pathways of mid-infrared plasmons in graphene nanostructures", Nature Photonics, 7, pp.394-399, (2013) [PDF]
P46. Wenjuan Zhu, Tony Low, Damon B. Farmer, Keith Jenkins, Bruce Ek, and Phaedon Avouris, "Effect of dual gate control on the alternating current performance of graphene radio frequency device", J. Appl. Phys. 114, 044307 (2013) [PDF]
P45. Marcus Freitag, Tony Low, Wenjuan Zhu, Hugen Yan, Fengnian Xia, Phaedon Avouris, "Photocurrent in graphene harnessed by tunable intrinsic plasmons", Nature Communications, Vol. 4, Article number:1951, (2013) [PDF]
P44. Wenjuan Zhu, Damon Farmer, Keith Jenkins, Bruce Ek, Satoshi Oida, Xuesong Li, Jim Bucchignano, Simon Dawes, Elizabeth A. Duch, and Phaedon Avouris, "Graphene radio frequency devices on flexible substrate", Appl. Phys. Lett. Vol. 102, 233102 (2013) [PDF]
2012
P43. Wenjuan Zhu, Tony Low, Vasili Perebeinos, Ageeth A. Bol, Yu Zhu, Hugen Yan, Jerry Tersoff, Phaedon Avouris, "Structure and electronic transport in graphene wrinkles", Nano Letters, Vol. 12, pp 3431-3436, (2012) [PDF]
P42. Hugen Yan, Xuesong Li, Bhupesh Chandra, George Tulevski, Yanqing Wu, Marcus Freitag, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia , "Tunable infrared plasmonic devices using graphene/insulator stacks", Nature Nanotechnology 7, 330-334 (2012) [PDF]
P41. Yanqing Wu, Damon B Farmer, Wenjuan Zhu, Shu-Jen Han, Christos D Dimitrakopoulos, Ageeth A Bol, Phaedon Avouris, Yu-Ming Lin, "Three-terminal graphene negative differential resistance devices", ACS Nano, 6, pp 2610-2616, (2012) [PDF]
P40. Hugen Yan, Zhiqiang Li, Xuesong Li, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia, "Infrared spectroscopy of tunable dirac terahertz magneto-plasmons in graphene", Nano Letters, 12, pp 3766-3771, (2012) [PDF]
P39. Ching-Tzu Chen, Tony Low, Hsin-Ying Chiu and Wenjuan Zhu, "Graphene-Side-Gate Engineering", IEEE Electron Device Letters, Vol. 33, No.3, pp. 330, (2012) [PDF]
P38. Yanqing Wu, Keith A Jenkins, Alberto Valdes-Garcia, Damon B Farmer, Yu Zhu, Ageeth A Bol, Christos Dimitrakopoulos, Wenjuan Zhu, Fengnian Xia, Phaedon Avouris, Yu-Ming Lin, "State-of-the-art graphene high-frequency electronics", Nano Letters, 12, pp 3062-3067, (2012) [PDF]
2011
P37. Wenjuan Zhu, C. Dimitrakopoulos, M. Freitag and Ph. Avouris, "Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC", IEEE Transactions of nanotechnology, Vol. 10, No. 5, pp.1196, (2011) [PDF]
P36. Hugen Yan, Fengnian Xia, Wenjuan Zhu, Marcus Freitag, Christos Dimitrakopoulos, Ageeth A. Bol, George Tulevski, and Phaedon Avouris, "Infrared Spectroscopy of Wafer-Scale Graphene", ACS Nano, Vol. 5, No.12, pp 9854, (2011) [PDF]
P35. Y.Q. Wu, D. B. Farmer, W. J. Zhu, A. Valdes-Garcia, K.A. Jenkins, C. Dimitrakopoulos, Ph. Avouris and Y.-M. Lin, “Record High RF Performance for Epitaxial Graphene Transistors”, IEEE International Electron Device Meeting (IEDM), Technical Digest, pp. 23.8.1 - 23.8.3, (2011)
2010
P34. Wenjuan Zhu, D. Neumayer, V. Perebeinos, and Ph. Avouris, "Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers", Nano Letters, Vol. 10, pp. 3572, (2010) [PDF]
P33. Y. Lin, C. Dimitrakopoulos, D. B. Farmer, S-J. Han, Y. Wu, Wenjuan Zhu, D. K. Gaskill, J. L. Tedesco, R.L. Myers-Ward, C.R. Eddy, Jr., Alfred Grill, and Ph. Avouris, "Multicarrier transport in epitaxial multilayer graphene", Applied Physics Letters, Vol. 97, 112107, (2010) [PDF]
2009
P32. Wenjuan Zhu, V. Perebeinos, M. Freitag and Ph. Avouris, "Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene", Physics Review B, Vol. 80, 235402, (2009) [PDF]
2008
P31. W.J. Zhu, J.Shepard, W. He, A. Ray, P. Ronsheim, D. Schepis, D. Mocuta, E. Leobandung, "High performance and highly stable ultra-thin oxynitride for CMOS applications",The 9th International Conference on Solid-State and Integrated-Circuit Technology, A6.5, (2008)
2006
P30. P. Jamison, M. Copel, M. Chudzik, M.M. Frank, B.P.Linder, R.Jammy, W.J. Zhu, “A comparison of electrical and physical properties of MOCVD hafnium silicate thin films deposited using various silicon precursors”, Materials Research Society Symposium Proceedings, v 917, Gate Stack Scaling: Materials Selection, Role of Interfaces, and Reliability Implications, p 95-99, (2006)
2005
P29. E. Leobandung, H. Nayakama, D.Mocuta, … W.J. Zhu, et. al, “High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell”, Symposium on VLSI Technology, Symposium on VLSI Technology, Digest of Technical Papers, p 126-127, (2005)
2004
P28. W. J. Zhu and T.P. Ma, "Temperature dependence of channel mobility in HfO2-gated NMOSFETs", IEEE Electron Device Letters, Vol. 25, No. 2, pp. 89- 91, (2004) [PDF]
P27. W.J. Zhu, J.P. Han, and T.P. Ma, "Mobility Measurement and Degradation Mechanisms of MOSFETs MadeWith Ultrathin High-k Dielectrics", IEEE Transactions on Electron Devices, Vol. 51, No.1, pp.98- 105, (2004) [PDF]
P26. Y. Yang, W. J. Zhu, T.P Ma and S. Stemmer, "High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics", Journal of Applied Physics, Vol. 95, No.7, pp.3772-3777, (2004) [PDF]
P25. D.-G. Park, Z.J. Luo, N. Edleman, W.J. Zhu, P. Nguyen, K. Wong, C. Cabral1, P. Jamison1, B.H. Lee, A. Chou, M. Chudzik, J. Bruley, O. Gluschenkov, P. Ronsheim, A. Chakravarti, R. Mitchell, V. Ku, H. Kim1, E. Duch1, P. Kozlowski1, C.D’Emic1, V. Narayanan1, A. Steegen, R. Wise, R. Jammy1, R. Rengarajan, H. Ng, A. Sekiguchi, and C.H. Wann, “Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow”, 2004 Symposium on VLSI Technology, Digest of Technical Papers, pp.186-187, (2004)
2003
P24. S. Stemmer, Z.Q. Chen, W. J. Zhu and T. P. Ma, "Electron Energy-loss Spectroscopy Study of Thin Film Hafnium Aluminates for Novel Gate Dielectrics", Journal of Microscopy, Vol. 210, Issue 1, pp.74-79, (2003) [PDF]
P23. N. V. Nguyen, J.-P. Han, and J.Y. Kim, W.J. Zhu, Z. Luo, and T. P. Ma, "Optical properties of jet-vapor-deposited TiAlO and HfAlO determined by vacuum ultraviolet spectroscopic ellipsometry", Characterization and Metrology for ULSI Technology, 2003 International Conference, pp.181-185, (2003)
P22. S. Stemmer, Y. Yang, Y. Li, B Foran, P.S. Lysaght, J.A. Gisby, J.R. Taylor, S.K. Streiffer, P. Fuoss, S. Seifert, W.J. Zhu, and T.P. Ma, "Structure and stability of alternative gate dielectrics for Si CMOS”, 2003 International Semiconductor Device Research Symposium, pp.60- 61, (2003)
P21. C.M. Osburn, S.K. Han, I. Kim, S.A. Campbell, E. Garfunkel, T. Gustafson, J. Hauser, T.-J. King, Q. Liu, P. Ranade, A. Kingon, D.-L. Kwong, S.J. Lee, C.H. Lee, K. Onishi, C.S. Kang, R. Choi, H. Cho, R. Nich, G. Lucovsky, J.G. Hong, T.P. Ma, W.J. Zhu, Z. Luo, J.P. Maria, D. Wicaksana, V. Misra, J.J. Lee, Y.S. Suh, G. Parksons, D. Niu, and S. Stemmer, “Integration Issues with high-k Gate Stacks”, The Electrochemical Society PV 2003-06, ULSI Process Integration III, p.375, (2003)
2002
P20. W.J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa and T.P. Ma, "Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics", IEEE Electron Device Letters, Vol. 23, No.11, pp. 649- 651, (2002) [PDF]
P19. W.J. Zhu, S. Zafar, T. Tamagawa, and T.P. Ma, "Charge trapping in ultra-thin hafnium oxide", IEEE Electron Device Letters, Vol. 23, No.10, pp.597-599, (2002) [PDF]
P18. W.J. Zhu, T.P. Ma, T. Tamagawa, J. Kim and Y.Di, "Current Transport in Metal/Hafnium Oxide/Silicon Structure", IEEE Electron Device Letters, Vol. 23, No.2, pp.97-99, (2002) [PDF]
P17. Min She Tsu-Jae King Chenming Hu Wenjuan Zhu, Zhijiong Luo Jin-Ping Han Tso-Ping Ma, "JVD silicon nitride as tunnel dielectric in p-channel flash memory", IEEE Electron Device Letters, Vol. 23, Issue: 2, pp. 91-93, (2002) [PDF]
P16. C.M. Osburn, I. Kim, S.K. Han, I. De, K.F. Yee, S. Gannavaram, S.J. Lee, C.-H. Lee, Z.J. Luo, W. Zhu, J.R. Hauser, D.-L, Kwong, G. Lucovsky, T.P. Ma, M.C. Ozturk, "Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?", IBM Journal of Research and Development, Vol. 46, No. 2/3, pp. 299-315, (2002) [PDF]
P15. W.J. Zhu, T. Tamagawa, W.Y. Wang, and T.P. Ma, “Mobility Extraction for MOSFETs Made with Ultra-thin High-k Dielectrics: Correct Accounting of Channel Carriers”, IEEE 33th Semiconductor Interface Specialists Conference (SISC), Sec. 7.2, (2002) (IEEE SISC Ed Nicollican Award for Best Student Paper)
P14. W.J. Zhu, T.P. Ma, T. Tamagawa, Y. Di, M. Gibson, J. Kim, R. Carruthers and T. Furukawa, “Thermal Stability of Hafnium Oxide and Hafnium Aluminum Oxide”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section 1, paper 02, (2002)
2001
P13. W.J. Zhu, T. P. Ma, T. Tamagawa, Y.Di, J. Kim, R. Carruthers, M.Gibson and T. Furukawa, “HfO2 and HfAlO for CMOS: Thermal Stability and Current Transport”, IEEE International Electron Device Meeting (IEDM), Technical Digest, Section 20-4, pp. 463-466, (2001)
P12. W.J. Zhu, M. Khare, J. Snare, P.R. Varekamp, S.H. Ku, P. Agnello, T.C. Chen and T.P. Ma, "Thickness Measurement of Ultra-thin Gate Dielectrics under Inversion Condition", International Symposium on VLSI Technologies, Systems and Applications, (2001)
P11. W.J. Zhu, T. Tamagawa, Y. Di and T.P. Ma, “Thermal Stability of Hafnium Oxide and Hafnium Aluminum Oxide”, IEEE 32th Semiconductor Interface Specialists Conference (SISC), Sec. 6.2, (2001)
P10. W.J. Zhu, T. Tamagawa, J. Kim, C. Broadbridge, T.P. Ma, “Characteristics of Ultra-thin Hafnium Oxide Gate Dielectrics”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section 3, paper 02, (2001)
P9. C. Caragianis-Broadbridge, J.-P. Han, T.P. Ma, A.H. Lehman, W.J. Zhu, Z. Luo, D.L. Pechkis, B.L. Laube; “Microstructure and Physical Characterization of Ferroelectric-gate Memory Capacitors with Various Buffer Layers”, Transport and Microstructural Phenomena in Oxide Electronics, Material Research Society, San Francisco, Vol. 666, (2001)
P8. C. Caragianis-Broadbridge, D.L. Pechkis and E. Anderson, J.-P. Han, W.J. Zhu, Z. Luo, T.P. Ma, A. Hein Lehman and K.L. Klein, and B.L. Laube, “Microstructural and Physical Properties of Thin Film Dielectrics on Silicon Substrates”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section, P4, (2001)
2000
P7. W.J. Zhu, T. Tamagawa, B. Halpern, X.W. Wang, and T.P. Ma, “Electrical Properties of Ultra-thin Hafnium Oxide Gate Dielectrics”, IEEE 31th Semiconductor Interface Specialists Conference (SISC), Sec. 1.2, (2000)
P6. C. Caragianis-Broadbridge, J. R. Miecznikowski, W.J. Zhu, Z. Luo, J. Han, and A. Hein Lehman, “Microstructure and Electronic Properties of Thin Film Nanoporus Silica as a Function of Processing and Annealing Methods”, Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, Material Research Society, San Francisco, Vol. 398, (2000)
P5. W.J. Zhu, X.W. Wang, and T.P. Ma, “Temperature Dependence of Channel Electron Mobility in 6H-SiC NMISFETs”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), (2000)
1999
P4. W.J. Zhu, X.W. Wang, T.P. Ma, Jesse B. Tucker and Mulpuri V. Rao, "Highly Durable SiC nMISFET's at 450oC", Materials Science Forum, Vols. 338-342, pp.1311-1314, (1999) [PDF]
P3. W.J. Zhu, X.W. Wang, and T.P. Ma, “Temperature dependence of channel Electron Mobility in 6H-SiC nMOSFETs”, IEEE 30th Semiconductor Interface Specialists Conference (SISC), Sec. 3.1, (1999)
P2. X.W. Wang, W.J. Zhu and T.P. Ma, “High Temperature Reliable nMOSFETs on p-type 6H-SiC”, IEEE International Electron Device Meeting (IEDM), Technical Digest, pp. 209-212, (1999)
1997
P1. Li Xiangyang, Zhao Jianhua, Zhu Wenjuan, Hu Xierong, "The Impulse Coupling of Interaction between Gradate and Intensive Pulsed Laser", Infrared and Laser Engineering, Vol. 26, No. 4, (1997) [PDF]